Test method of a semiconductor device and manufacturing method of a semiconductor device

ABSTRACT

A test method for a semiconductor device comprising a substrate wafer in which an element is formed and a material through which an infrared ray can be transmitted and a package having airtight space between a cap wafer which is provided being opposite to the substrate wafer, and which includes an applying water process in which a semiconductor device is exposed to high moisture atmosphere and a leak discrimination process in which an infrared ray from the semiconductor device is detected and leak of the package is discriminated based on absorption of the infrared ray by water molecules.

TECHNICAL FIELD

This invention relates to air tightness evaluation of a semiconductor device having the structure of a wafer level chip scale package (WL-CSP).

BACKGROUND ART

An air tightness evaluation of a semiconductor device is evaluated by a method which is called as common name fine leak test, that is, after a device is manufactured, the device is exposed to helium atmosphere which is pressurized by several pressures, helium is injected to the device having poor airtightness, and helium which is invaded is evaluated by a helium detector (for example refer to Patent Document 1). Regarding the above mentioned method, it is required for several hours to pressurize helium and detect helium, it is difficult to evaluate devices individually, therefore, it is required to evaluate several tens to several hundreds devices all at once. Consequently, in a case where leak is found, it is necessary to abandon a test lot all at once, or it is necessary to divide devices to small amount of device and evaluate them for many times. As a result, there is a problem such that it is required times to perform a test. Further, in a case where a semiconductor device is a wafer level chip scale package, in comparison with general electronic devices, volume is smaller and an amount of helium to be injected is small, therefore there is a problem such that detection sensitivity of leak cannot be obtained sufficiently.

Further, regarding a method to test moisture resistance, there is a method in which while a device is operated, the device is exposed to high temperature high moisture atmosphere, based on change of device characteristic, leak is detected (for example Patent Document 2). According to the above mentioned method, in order to energize each device in high temperature high moisture state, an evaluation device having a complicated structure is necessary and there is a problem such that it is required for more than several days to detect leak.

PRIOR ART DOCUMENT Patent Document

[Patent Document 1] JP 2004-23054A

[Patent Document 2] JP 2010-245348A

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

As above mentioned, regarding fine leak test, it is required time for a test, and in a case where the fine leak test is applied to a wafer level chip scale package, detection sensitivity of leak cannot be sufficiently obtained, therefore, test accuracy becomes worse. Further, regarding method which is disclosed by Patent Document 2, there is a problem such that it is required time for a test.

This invention is made for solving the above mentioned problems, and an objective of this invention is to provide a test method for a semiconductor device requiring short time for a test and having high detection sensitivity of leak in a case where the test is applied to a wafer level chip scale package.

Means for Solving Problems

A test method of a semiconductor device according to this invention is a method to test a semiconductor device having a package with airtight space, which is provided between a substrate wafer in which an element is formed and a cap wafer which is made of a material which can transmit an infrared ray and is provided being opposite to the substrate wafer, and the test method includes an applying water process in which the semiconductor device is exposed to high moisture atmosphere and a leak discrimination process in which an infrared ray from the semiconductor device is detected and leak of the package is discriminated based on absorption of the infrared ray by water molecules.

Effect of Invention

According to this invention, in a leak test of wafer level chip scale package, a test which requires only short time and has high accuracy can be performed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a cross section of a semiconductor device for describing a test method of a semiconductor device according to Embodiment 1 of this invention.

FIG. 2 is flow chart for showing a manufacturing method of a semiconductor device which includes a test method of a semiconductor device according to Embodiment 1 of this invention.

FIG. 3 is a cross section of another semiconductor device for describing a test method of a semiconductor device according to Embodiment 1 of this invention.

FIG. 4 is a cross section of a semiconductor device for describing a test method of a semiconductor device according to Embodiment 2 of this invention.

FIG. 5 is flow chart for showing a manufacturing method of a semiconductor device which includes a test method of a semiconductor device according to Embodiment 2 of this invention.

FIG. 6 is a cross section of a semiconductor device for describing a test method of a semiconductor device according to Embodiment 3 of this invention.

FIG. 7 is flow chart for showing a manufacturing method of a semiconductor device which includes a test method of a semiconductor device according to Embodiment 3 of this invention.

FIG. 8 is a cross section of a semiconductor device for describing a test method of a semiconductor device according to Embodiment 4 of this invention.

FIG. 9 is flow chart for showing a manufacturing method of a semiconductor device which includes a test method of a semiconductor device according to Embodiment 4 of this invention.

FIG. 10 is a cross section of a semiconductor device for describing a test method of a semiconductor device according to Embodiment 5 of this invention.

FIG. 11 is flow chart for showing a manufacturing method of a semiconductor device which includes a test method of a semiconductor device according to Embodiment 5 of this invention.

MODE FOR CARRYING OUT THE INVENTION Embodiment 1

Hereinafter, Embodiment of this invention will be described referring figures. FIG. 1 is for describing a test method of a semiconductor device according to Embodiment 1 of this invention by using a cross section of a semiconductor device 100 which is an object of a test. On a substrate wafer 1 which is made of GaAs, for example, a transistor 4 for high frequency amplification is formed. In FIG. 1, as the transistor 4, a FET having a source S, a drain D and a gate G is shown as an example. As the transistor 4, it is not limited to FET, but any element which is formed on the substrate wafer 1, such as a semiconductor element other than a transistor or an integrated circuit is acceptable. Further, in many cases, a circuit which electrically connects between elements is formed. By a cap wafer 3 which is made of GaAs and a sealing frame 2 which is formed of gold, in an area where the transistor 4 is formed, the cap wafer 3 is provided being opposite to the substrate wafer 1 so as to form airtight space 7 whose air tightness is secured. In order to supply power to the transistor 4, on the cap wafer 3, a penetrating via hole (V/H) 5 is formed. An electrode pad 6 for supplying power from outside is connected to the via hole 5. The semiconductor device 100 having the above mentioned configuration is classified to be a semiconductor device which is called as a wafer level size package.

Conventionally regarding air tightness test of a semiconductor element which is sealed in a package, a test of helium leak which is disclosed by Patent Document 1 or a method, in which a device is exposed to high temperature high moisture atmosphere and based on change of device characteristics, leak is examined, which is disclosed by Patent Document 2 is used. Regarding electronic devices, generally, in many cases, a package which is made of ceramics or resin is used, and a material does not transmit a light, therefore, there is not any idea to perform a test of inside of a package by using a light. On the other hand, inventors of this invention found out such that in a wafer level chip size package, in some cases, as a material by which a package is made, the same material as that of the substrate wafer 1 on which elements are formed, for example, a material such as GaAs is used, and GaAs transmits a light in an infrared ray range and water has an absorption band of light in an infrared ray range, and as a result, the inventors reached an idea of this invention.

In a test method of a semiconductor device according to Embodiment 1, as shown in FIG. 1, an infrared ray 8 is irradiated to a semiconductor device 100 from outside, by detecting the infrared ray which is transmitted with an infrared ray detector 9, it will be tested whether water 20 is contained in the airtight space 7 of the semiconductor device 100 or not. Hereinafter, the details of a test method will be described by flow chart of FIG. 2 which includes a manufacturing method of a semiconductor device.

On the substrate wafer which is made of GaAs 1, the transistor 4 and circuits will be manufactured by general device manufacturing process (Step ST1). At this time, the sealing frame 2 for air tight sealing will be separately manufactured on the substrate wafer 1 (Step ST1). The Step ST1 will be referred as an element forming process. The sealing frame 2 is formed, for example, of aggregation of gold grain, deposition, spattering or plating of gold. In many cases, in order to improve adhesiveness, not only gold but also a film of Ti, Cr, Pt, Pd, etc. is layered. After that, the substrate wafer 1 and the cap wafer 3 which is made of a material which is similar to that of the substrate wafer 1 is pasted in a nitrogen atmosphere and high temperature about 300° C. (Step ST2). In order to take out an electrode outside, the via hole 5 and a penetrating electrode 50 and an electrode pad 6 are formed on the cap wafer 3 in advance. In FIG. 1, an example in which an electrode is taken out from the cap wafer 3 is shown, however, a penetrating electrode may be formed on the substrate wafer 1. As above mentioned, a semiconductor device which is configured by a plurality of packages having the air tight space 7 which is sealed with the sealing frame 2 between the substrate wafer 1 and the cap wafer 3 is individualized by dicing or scribing for every package (Step ST3). The Step ST2 and the Step ST3 will be referred as a package forming process.

Packages which are individualized will be exposed to high moisture atmosphere (Step ST4). The Step 4 will be referred as a applying water process. Regarding temperature and relative humidity in exposure condition, a standard condition is 85° C./85% for about 1 day or 130° C./85% for about two hours. Generally, in a wafer level chip size package, it is difficult to obtain adhesion between the sealing frame 2 and the substrate wafer 1 and the cap wafer 3, and in some cases, air tightness cannot be sufficiently obtained. In a case where the air tightness is poor, while a device is used, water is invaded from outside atmosphere to the air tight space 7 in the package, and by reacting the water and the transistor 4, oxidation of GaAs, corrosion of an electrode, ion migration of metal will be induced so as to cause deterioration of a device. Consequently, securing airtightness is an important subject.

In a test method of a semiconductor device according to Embodiment 1, as an air tightness test, first, a semiconductor device will be exposed to high moisture atmosphere, and water will be injected accelerating and deliberately from a leak part. At this time, in a package where leak exists, an amount of water inside the package will be increased. After the semiconductor device is exposed to high moisture atmosphere, the infrared ray 8 will be irradiated from outside to transmit through the package, with the infrared ray detector 9 which is provided outside, an infrared ray spectrum will be measured (Step ST5). In a case where leak exists in a package and water is invaded to inside, an infrared ray spectrum which is measured is absorption spectrum whose strength is lowered by absorption wavelength of water. Consequently, by an absorption spectrum in an infrared ray spectrum which is measured, absorption by water will be judged, and by non-destructive test, leak can be discriminated individually for each package (Step ST6). The Step ST5 and the Step ST6 will be referred as a leak discrimination process.

As above mentioned, in Embodiment 1, absorption by water of an infrared ray will be utilized. One of the most sensitive method among the above mentioned methods is FTIR (Fourier transform infrared spectroscopy). By performing Fourier transformation, noise will be removed and an infrared ray spectrum can be measured with high sensitivity. As the substrate wafer 1 and the cap wafer 3, a band gap of GaAs which is used for a package is 1.42 eV, and when the band gap is transformed to be a wavelength, the band gap is 873 nm. In FTIR, a range of wavelength from 1 μm to 20 μm will be measured, therefore, GaAs is transparent and an infrared ray which is used for FTIR can be transmitted.

In a case where water exists in a light path of FTIR, according to the number of vibration of molecule vibration of a water molecule (expansion vibration, deformation vibration, etc.), molecule vibration will be excited by irradiation light so as to absorb an infrared ray. In a water molecule, in 1.5 μm, 2 μm, 2.5 μm to 3.5 μm, Sum, 5.5 μm to 7 μm, and so on, there are large infrared ray absorption wavelength bands. When pressure is 1 pressure and temperature is 25° C. in a package, and pressure reaches saturation pressure, partial pressure of water vapor is 3168 Pa. When water vapor in a package is condensed, a film thickness of water molecules is about 0.1 μm or less, and a range can be detected by using FTIR having high sensitivity. As above mentioned, by irradiating an infrared ray which can be transmitted through the cap wafer 3 and the substrate wafer 1 from outside and which includes an absorption wavelength band of a water molecule, in a case where water exists, an absorption spectrum in the above mentioned infrared ray absorption wavelength band is measured, therefore, based on absorption of an infrared ray by water, by non-destructive inspection, increase of an amount of water inside due to leak can be individually detected.

In Embodiment 1, a case in which GaAs is used is described, however, a wafer level chip size package, in which the substrate wafer 1 and the wafer 3 which are made of other material are used, can be applied. In a case of Si, a band gap is 1.12 eV, therefore, an infrared ray with wavelength which is longer than 1.1 μm can be transmitted, accordingly, the similar test can be performed. In a case of InP, a band gap is 1.35 eV, therefore, a wavelength is 918 nm, in a case of SiC, a band gap is 3.26 eV and a wavelength is 380 nm, and in a case of GaN, a band gap is 3.4 eV and a wavelength is 364 nm, and in order to transmit an infrared ray having absorption wavelength band of a water molecule, by using an infrared ray having a wavelength longer than 1 μm, similar effect can be obtained.

In the above mentioned, by using FTIR, a spectrum in an infrared ray range is measured, and by an absorption spectrum of a water molecule, leak is discriminated. As abovementioned, infrared ray absorption wavelength bands are known, therefore without using FTIR, as an infrared ray to be irradiated, an infrared ray having any wavelength in an absorption wavelength band of a water molecule may be used. In this case, absorption of water is discriminated not by a spectrum, but by strength of an infrared ray which transmits through a package, for example, by comparing the strength of an infrared ray which transmits through a package which is reference such that leak does not exist, and the strength of an infrared ray which transmits through a package which is an objective to be tested, by discriminating absorption of water of infrared ray, leak of package can be discriminated.

Further, in FIG. 1, an example of a wafer level chip size package in which space is formed by the sealing frame 2 is shown, however, as shown in FIG. 3, a wafer level chip size package having other shape, in which air tight space 7 is formed by a cap wafer 3 having hollow and a substrate wafer 1 or air tight space is formed by a substrate wafer having hollow and a cap wafer can be applied. As above mentioned, a semiconductor device, which is configured by a substrate wafer on which an element is formed and a material in which an infrared ray can be transmitted, and between a substrate wafer and a cap wafer which is provided being opposite to the substrate wafer, a package is formed, can be applied.

Embodiment 2

FIG. 4 is for describing a test method of a semiconductor device according to Embodiment 2 of this invention by using a cross section of a semiconductor device 100. Further, FIG. 5 is a flow chart for showing including a manufacturing method of a semiconductor device. A semiconductor device 100 is the same as that shown in FIG. 1. After the semiconductor device 100 is exposed to high moisture atmosphere, by cooling the semiconductor device 100, in a package with leak, as shown in FIG. 4, in an inner surface of a substrate wafer 1 and a cap wafer 3, condensation is caused so as to form a water film 21.

The Steps ST1 to ST4 shown in FIG. 5 are the same as those which are described in Embodiment 1. By exposing the semiconductor device 100 to high moisture atmosphere in the same way as that in Embodiment 1, water is injected to a package with leak. After that, whole of the package is cooled (Step ST41), and water is condensed so as to form the water film 21. From an infrared ray source 80 outside, an infrared ray 8 is irradiated, and the infrared ray 8 is transmitted through the cap wafer 3 which is made of a material through which an infrared ray can transmit and is reflected by the water film 21. The reflecting light is radiated outside again and the infrared ray is detected by a detector 122. An infrared ray spectrum of the reflecting light is measured (Step ST 51). In a case where the water film 21 exists, an infrared ray spectrum which is measured is absorption spectrum whose strength is decreased at an absorption wavelength of water, therefore by an infrared ray spectrum, absorption of water is judges so as to discriminate leak in a package (Step ST 6).

Water which is invaded in a package by exposing a semiconductor device to high moisture atmosphere can be converted to the water film 21 by cooling to be condensed. For example, when a temperature is 25° C. and relative moisture is 50%, a dew point is 13.9° C., when relative moisture is 10%, a dew point is −8.7° C., when relative moisture is 1%, a dew point is −35° C., and when it is cooled to be −65° C., water which is invaded from minute leak can be almost condensed. Below a freezing point, the water film 21 is ice state, however, due to the difference of hydrogen bond between water molecules, absorption strength of water is slightly changed from that of ice, even it is ice, the spectrum which is same as that of water can be obtained and can be detected.

In a case where it is condensed, it is simple to cool whole of package, however, it is acceptable such that by spraying cooling wind only to the cap wafer 3, condensation may be caused. As water in a package only at a side of the cap wafer 3 is condensed, therefore, about two times of water film thickness can be secured so as to improve detection sensitiveness.

Further, it is acceptable such that by cooling only an irradiation part selectively, an infrared ray is irradiated convergently. As whole of water in a package is converged in a narrow area so as to be condensed, water can be detected with higher sensitivity.

In Embodiment 1, by transmitting an infrared ray, water inside a package is detected. In Embodiment 2, by reflecting an infrared ray in the cap wafer 3, an infrared ray absorption of water is detected. Regarding FTIR, in a case where an infrared ray is reflected in the cap wafer 3, absorption of deposits can be detected by seeping effect of light. Further, as shown in FIG. 3, by causing multiple reflection, detection sensitivity can be improved dramatically, and trace amount of water can be detected with excellent sensitivity. Further, according to a method of Embodiment 2, an infrared ray which is reflected in the cap wafer 3 is measured, therefore, the method can be applied to a semiconductor device which is made of a material through which the substrate wafer 1 cannot transmit an infrared ray.

Further, in the same way as that which is described in Embodiment 1, without using FTIR, as an infrared ray to be irradiated, an infrared ray having any wavelength in an absorption wavelength of a water molecule may be used. In this case, existence of water is not judged based on spectrum, but by measuring strength of an infrared ray which is reflected from the cap wafer 3, for example, by comparing strength of an infrared ray which is reflected from a cap wafer of a package which is reference such that leak does not exist, and strength of an infrared ray which is reflected from a cap wafer 3 of a package which is an objective to be tested, so as to discriminate absorption of water.

Embodiment 3

FIG. 6 is a diagram for describing a test method of a semiconductor device according to Embodiment 3 of this invention by using a cross section of a semiconductor device 100 which is an objective of test. Further, FIG. 7 is flow chart showing including a manufacturing method of a semiconductor device. A semiconductor device 100 is the same as that which is sown in FIG. 1,

In the same way as that of Embodiment 1, by exposing a package to high moisture atmosphere (Step ST4), water will be injected to a package with leak. After that, whole of package will be cooled (Step ST41) and by condensing water, as shown in FIG. 6, a water film 21 will be formed. Next, when electric power is supplied to an element which is formed on a substrate wafer, such as a transistor (Step ST52) so as to operate an element, the element will generate heat so as to radiate an infrared ray 80. By transmitting the infrared ray through the water film 21 and by measuring a spectrum of an infrared ray which is radiated outside of a package, the water film 21 will be detected. FIG. 6 shows an example in a case where the water film 21 is formed, however, even in a case of a water vapor state as shown in FIG. 1, measuring can be performed.

Generally, when a transistor is operated, a temperature will be several ° C. to several tens ° C., when large current is flown, in some cases, a temperature of a transistor part reaches 100° C. In the above mentioned high temperature state, an infrared ray is generated by radiation. With regard to a wave length, the infrared ray is comparatively uniform continuous light. In a case where water vapor exists in the water film 21 or in airtight space 7, regarding an infrared ray which is generated, an infrared ray in absorption wavelength band of a water molecule will be absorbed by the water film 21 or water vapor so as to be a characteristic spectrum, and by measuring the spectrum of infrared ray with a detector 9, absorption of water can be judged. In comparison with the above mentioned Embodiments, an irradiation light source is not necessary, therefore, a detection device can be made to be simple. An infrared ray can be generated independently only in a package which is operated, therefore by using a cheap detector which measures a plurality of packages simultaneously and extensively, an infrared ray can be measured. By operating elements of different packages sequentially, based on an absorption spectrum of water in a spectrum of infrared ray which is measured every time when an element is operated, leak in each package can be discriminated. Further, in a method of Embodiment 3, an infrared ray which transmits through a cap wafer 3 is measure, therefore, the method can be applied to a semiconductor device which is made of a material through which the substrate wafer 1 cannot transmit an infrared ray.

Embodiment 4

FIG. 8 is a diagram for describing a test method of a semiconductor device according to Embodiment 4 of this invention by using a cross section of a semiconductor device 100 which is an objective of test. Further, FIG. 9 is flow chart showing including a manufacturing method of semiconductor device. A semiconductor device 100 is same as that shown in FIG. 1. After the semiconductor device 100 is exposed to high moisture atmosphere, by cooling the semiconductor device 100, in a package which has leak, as shown in FIG. 8, in an inner surface of a substrate wafer 1 and a cap wafer 3, water is condensed so as to form a water film 21.

As described in Embodiment 2, it is acceptable such that by spraying cooling wind only to the cap wafer 3, water is condensed. Further, it is also acceptable such that by selectively cooling only an irradiation part, an infrared ray is focused and is irradiated.

An infrared ray 10 is made incident from an infrared ray source 8 outside to the cap wafer 3 of the semiconductor device 100, the infrared ray 10 is transmitted through the cap wafer 3 so as to be reflected on the water film 21. A reflecting light is radiated outside again, and the light is detected by the detector 90. In order to perform polarization spectroscopy of reflected light, a principle of ellipsometry is used (Step ST54).

In ellipsometry, a polarization angle of reflected light with regard to incident light will be monitored. When a water film having a refractive index and dispersion which are different from those of a cap wafer adheres to a cap wafer, a polarization angle is different from that in a case where the water film does not adhere to a cap wafer, therefore a water film can be detected. Detection sensitivity is high, and when a water film of several atom layers exists, a water film can be detected, therefore even when a slight of leak exists, a water film can be detected. In FIG. 8, multiple reflection is made in the cap wafer 3. According to the number of reflection, detection sensitivity can be improved. Of course, when only one reflection occurs, sufficient detection sensitivity can be obtained.

In the above mentioned, as a light for ellipsometry, an infrared ray is used, however, in a case where the cap wafer 3 is formed of GaN, for example, a visible light transmits, therefore, by using a visible light, with ellipsometery, a polarization angle can be detected. As above mentioned, in Embodiment 4 in which ellipsometery is used, not by utilizing infrared ray absorption of water molecules, but utilizing a polarization angle of reflected light, existence of water film is detected. Therefore, it is not limited to a light in an infrared ray area, but by making a light including a light having a wave length which can transmit into a material of the cap wafer 3 incident, existence of water film can be judged by ellipsometeery, and leak can be discriminated.

Embodiment 5

FIG. 10 is a diagram for describing a test method of a semiconductor device according to Embodiment 5 of this invention by using a cross section of a semiconductor device 200 which is an objective of test. Further, FIG. 11 is flow chart showing including a manufacturing method of a semiconductor device. In Embodiment 1, when a package is exposed to high moisture atmosphere, in order for water to invade to each package, it is necessary to cut each package into pieces. When a package is not cut into pieces, surroundings of each package are surrounded by other packages, therefore, water cannot be supplied from outside. In Embodiment 5, after a cap wafer is pasted (Step ST2), in order to supply water from outside to each package, in a cap wafer 3 which is situated between each of adjacent packages, a through hole 14 is formed (Step ST31). After that, the package is exposed to high moisture atmosphere (Step ST4). Water is supplied through the through hole 14 to each package.

Regarding a wafer level chip size package, in one wafer whose size is several inches, several hundreds to tens of thousands of packages are formed. When each packages is individualized by dancing or scribing, handling or measuring in post-process will be complicated. In Embodiment 5, water can be supplied to each package through the through hole 14, therefore, it is not necessary to individualize a wafer, and it is possible to evaluate a wafer itself, therefore, handling will be easy and process will be simplified.

In FIG. 11, a method of Embodiment 1 is shown as an example of a method to discriminate leak by detecting water after a package is exposed to high moisture atmosphere, however, it is not necessary to mention such that a semiconductor device shown in FIG. 10 can be applied to any test method which was described in Embodiments 1 to 4.

Within the scope of this invention, each embodiment can be combined or each embodiment can be approximately changed or omitted.

EXPLANATION OF REFERENCE CHARACTERS

-   1 substrate wafer -   3 cap wafer -   4 transistor (element) -   7 airtight space -   20 water -   21 water film -   100, 200 semiconductor device 

1. A test method of a semiconductor device having a package with airtight space, which is provided between a substrate wafer in which an element is formed and a cap wafer which is made of a material which can transmit an infrared ray and is provided being opposite to the substrate wafer, wherein an applying water process in which the semiconductor device is exposed to high moisture atmosphere and a leak discrimination process in which an infrared ray from the semiconductor device is detected and leak of the package is discriminated based on absorption of the infrared ray by water molecules are included, wherein the leak discrimination process comprises steps of supplying electric power to the element which is formed in the substrate wafer and discriminating leak of the package based on spectrum of an infrared ray which is radiated from the element and is radiated outside the package. 2.-6. (canceled)
 7. A test method of a semiconductor device having a package with airtight space, which is provided between a substrate wafer in which an element is formed and a cap wafer which is made of a material which can transmit a light and is provided being opposite to the substrate wafer, wherein the test method comprises an applying water process in which the semiconductor device is cooled after the semiconductor device is exposed to high moisture atmosphere and a leak discrimination process comprising steps of making a light which includes a light having a wavelength which can transmit the cap wafer incident into the cap wafer and discriminating leak of the package by ellipsomentry.
 8. A method of manufacturing a semiconductor device comprising an element forming process of forming elements on a substrate wafer, a package forming process of forming a package with airtight space, in an area where the element exists, which is formed by providing a cap wafer, which is made of a material through which an infrared ray can be transmitted, being opposite to the substrate wafer and a process of discriminating leak in the package by the test method of a semiconductor device according to claim
 1. 9. A method of manufacturing a semiconductor device comprising an element forming process of forming elements in a substrate wafer, a package forming process of forming a package with airtight space, in an area where the element exists, which is formed by providing a cap wafer, which is made of a material through which a light can be transmitted, being opposite to the substrate wafer and a process of discriminating leak in the package by the test method of a semiconductor device according to claim
 7. 10. The method of manufacturing a semiconductor device according to claim 8, wherein the package forming process includes steps of forming a plurality of packages with regard to one piece of the substrate wafer and individualizing the packages to every package.
 11. The method of manufacturing a semiconductor device according to claim 8, wherein the package forming process includes steps of forming a plurality of packages with regard to one piece of the substrate wafer and forming a penetrating hole in the cap wafer which is between each of adjacent packages.
 12. The method of manufacturing a semiconductor device according to claim 9, wherein the package forming process includes steps of forming a plurality of packages with regard to one piece of the substrate wafer and individualizing the packages to every package.
 13. The method of manufacturing a semiconductor device according to claim 9, wherein the package forming process includes steps of forming a plurality of packages with regard to one piece of the substrate wafer and forming a penetrating hole in the cap wafer which is between each of adjacent packages. 